Interactive Art To Go

Traditional artworks like paintings, photographs, or films can be reproduced by conventional media like printing or video. This makes visitors of museums possible to purchase postcards, posters, books, and DVDs of pictures and/or movies shown at the exhibition. However, newly developing arts so called interactive art, or new media art, has not been able to be reproduced due to limitation of functionalities of the conventional media. In this article, the authors report a novel approach of sharing such interactive art outside the exhibition, so that the visitors of the museum can take a copy to home, and even share it with non-visitors. The authors build up their new projector-and-camera (ProCam) based interactive artwork for exhibition at Museum of Contemporary Art Tokyo (MOT) by using Apple's iPhone. The exactly same software driving this artwork was downloadable from Apple's App Store -- thus all visitors or even non-visitors could enjoy the same experience at home or wherever they like

Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate

AlN epilayers were grown on (0001) sapphire substrates by metal‐organic vapor phase epitaxy (MOVPE), and the influence of substrate\u27s surface structure on the formation of in‐plane rotation domain is studied. The surface structure of sapphire substrate is found to change during thermal cleaning and temperature ramp‐up. The oxygen‐terminated surface with monolayer (ML) steps having ABAB stacking is attributed to cause the formation of a small‐angle grain boundary (SAGB). To suppress the formation of such a special grain boundary, the two‐step temperature growth technique was employed. It was found that a proper timing of the low‐temperature buffer layer (LT BL) growth is necessary to eliminate the SAGB. Moreover, the BL growth temperature (Tg) is also found to affect the surface morphology and structural quality of AlN epilayer. The optimized LT BL Tg is found to be 1050°C. The optical emission property by cathodoluminescence (CL) measurements showed higher emission intensity from AlN epilayer without SAGB

A high-performance deep reservoir computing experimentally demonstrated with ion-gating reservoirs

While physical reservoir computing (PRC) is a promising way to achieve low power consumption neuromorphic computing, its computational performance is still insufficient at a practical level. One promising approach to improving PRC performance is deep reservoir computing (deep-RC), in which the component reservoirs are multi-layered. However, all of the deep-RC schemes reported so far have been effective only for simulation reservoirs and limited PRCs, and there have been no reports of nanodevice implementations. Here, as the first nanodevice implementation of Deep-RC, we report a demonstration of deep physical reservoir computing using an ion gating reservoir (IGR), which is a small and high-performance physical reservoir. While previously reported Deep-RC scheme did not improve the performance of IGR, our Deep-IGR achieved a normalized mean squared error of 0.0092 on a second-order nonlinear autoregressive moving average task, with is the best performance of any physical reservoir so far reported. More importantly, the device outperformed full simulation reservoir computing. The dramatic performance improvement of the IGR with our deep-RC architecture paves the way for high-performance, large-scale, physical neural network devices.Comment: 21 pages, 6 figure

Molecular association between flavin derivatives and dendritic polymers at the water|1,2-dichloroethane interface

The ion transfer and adsorption mechanism of flavin derivatives, riboflavin (RF) and flavin mononucleotide (FMN), at the polarized water|1,2-dichloroethane (DCE) interface were studied in the presence of the fourth generation (G4) amino-terminated polyamidoamine (PAMAM) dendrimer or hyperbranched bis-MPA polyester-64-hydroxyl (HBP). The flavin derivatives associated with the positively charged G4 PAMAM dendrimer both in the aqueous solution and at the water|DCE interface. Spectroelectrochemical analysis through potential-modulated fluorescence spectroscopy demonstrated that the dendrimer-bound flavin derivatives were transferred across the water|DCE interface in the positive potential region, while the interfacial adsorption of flavin derivatives in the negative potential region was effectively inhibited by the competitive adsorption of the neutral G4 HBP molecules. © 2016 Elsevier B.V.Embargo Period 12 months / This article has Supplementary material of the different file

Understanding the formation of maxillary sinus in Japanese human foetuses using cone beam CT

The formation of the maxillary sinus (MS) is tied to the maturation of the craniofacial bones during development. The MS and surrounding bone matrices in Japanese foetal specimens were inspected using cone beam computed tomography relative to the nasal cavity (NC) and the surrounding bones, including the palatine bone, maxillary process, inferior nasal concha and lacrimal bone. The human foetuses analysed were 223.2 ± 25.9 mm in crown-rump length (CRL) and ranged in estimated age from 20 to 30 weeks of gestation. The amount of bone in the maxilla surrounding the MS increased gradually between 20 and 30 weeks of gestation. Various calcified structures that formed the bone matrix were found in the cortical bone of the maxilla, and these calcified structures specifically surrounded the deciduous tooth germs. By 30 weeks of gestation, the uncinate process of the ethmoid bone formed a border with the maxilla. The distance from the midline to the maximum lateral surface border of the MS combined with the width from the midline to the maximum lateral surface border of the inferior nasal concha showed a high positive correlation with CRL in Japanese foetuses. There appears to be a complex correlation between the MS and NC formation during development in the Japanese foetus. Examination of the surrounding bone indicated that MS formation influences maturation of the maxilla and the uncinate process of the ethmoid bone during craniofacial bone development

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Tailoring the electronic states of the dielectric oxide/diamond interface is critical to the development of next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate the electronic states of the TiO2/diamond 2 × 1-(100) interface by using first principles total energy calculations. Based on the calculation of the chemical potentials for the TiO2/diamond interface, it is observed that the hetero-interfaces with the C-OTi configuration or with two O vacancies are the most energetically favorable structures under the O-rich condition and under Ti-rich condition, respectively. The band structure and density of states of both TiO2/diamond and TiO2/H-diamond hetero-structures are calculated. It is revealed that there are considerable interface states at the interface of the anatase TiO2/diamond hetero-structure. By introducing H on the diamond surface, the interface states are significantly suppressed. A type-II alignment band structure is disclosed at the interface of the TiO2/diamond hetero-structure. The valence band offset increases from 0.6 to 1.7 eV when H is introduced at the TiO2/diamond interface

Method to Develop Pseudo Three-dimensional Dental Image from Dental Panoramic Radiograph

Although three-dimensional imaging can be a powerful tool for dentists to explain treatments to patients, obtaining of three-dimensional image of teeth in general dental clinics is difficult. This paper proposed a method to develop pseudo three-dimensional dental image from conventional dental panoramic radiograph and dental impression. The method estimates imaging parameters of given panoramic radiograph through comparison with dental cast, and re-projects the radiograph into three-dimensional space. The developed pseudo three-dimensional image gives clear impression of the patient’s dental condition

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed